We are conducting research on the physical properties evaluation and process technology for the development of power electronics devices using Silicon Carbide (SiC) semiconductors. Until the early 2010s, we have been driving projects related to next-generation automotive technologies for mitigating global warming. Parallelly, we have conducted the development of radiation-resistant electronics to aid the recovery from the Fukushima Daiichi nuclear disaster. In the latter half of the 2010s, in addition to these efforts, we have been expanding our research into applications such as 'single-photon sources' and 'quantum spin devices,' primarily utilizing SiC semiconductors. Our focus is on developing compact and portable quantum computers, quantum sensors operating at room temperature, practical quantum information communication networks, and quantum imaging technologies.

Our research themes can be broadly summarized as follows:

• Creation of quantum effect devices using single-photon sources/spins in SiC semiconductors.
• Development of super-resolution microscopy based on quantum optics and observation of biological tissues.
• Optical and electrical evaluation of SiC/oxide film interfaces, elucidation of thermal oxidation mechanisms.
• Development of radiation-hard semiconductor devices.

Our research laboratory actively promotes collaborative research with other institutions such as the National Institute for Quantum Science and Technology (QST, Takasaki), National Institute of Advanced Industrial Science and Technology (AIST, Tsukuba), Tokyo Institute of Technology, and Saitama Medical University. We recommend this research path to those of you aspiring for graduate studies or conference presentations.