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*My surname has been changed since 1999 (Uno->Hijikata)

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Papers

• M. Samad, M. Shimizu, and Y. Hijikata
  Demonstration of Quantum Polarized Microscopy using an Entangled-Photon Source
  Photonics, Vol. 12, a.n. 127 (2025).
  PDF DOI: 10.3390/photonics12020127

• M. Shimizu, K. Sugimoto, and Y. Hijikata
  Thermoelectric measurements of nanomaterials by nanodiamond quantum thermometry
  Appl. Phys. Express, Vol. 17, a.n. 095001 (2024).
  PDF,suppl DOI: 10.35848/1882-0786/ad6fe9

• (In Japanese)T. Kawaguchi, R. Oishi, M. Shimizu, Y. Hijikata, S. Aikawa
  Characterization of amorphous SnO₂:N thin-films prepared by RF magnetron sputtering in Ar/N₂ mixed gas atmosphere
  IEEJ Trans. C, Vol.　144, pp. 1093-1099 (2024).
  DOI: 10.1541/ieejeiss.144.1093

• S. Motoki, S.-i. Sato, S. Saiki, Y. Masuyama, Y. Yamazaki, T. Ohshima, K. Murata, H. Tsuchida, and Y. Hijikata
  Optically Detected Magnetic Resonance of Silicon Vacancies in 4H-SiC at Elevated Temperatures toward Magnetic Sensing under Harsh Environments
  J. Appl. Phys., Vol. 133, a.n. 154402 (2023)..
  DOI: 10.1063/5.0139801

• M. Shimizu, M. Shugo, S. Mori, Y. Hijikata, and S. Aikawa
  The influence of oxygen related defects on the formation of In2O3-based low fluorescence transparent conducting film
  Phys. Status Solidi A, Vol. 220, a.n. 2200896 (2023).
  PDF DOI: 10.1002/pssa.202200896

• T. Suzuki, Y. Yamazaki, T. Taniguchi, K. Watanabe, Y. Nishiya, Y.-i. Matsushita, K. Harii, Y. Masuyama, Y. Hijikata, and T. Ohshima
  Spin property improvement of boron vacancy defect in hexagonal boron nitride by thermal treatment
  Appl. Phys. Express, Vol. 16, a.n. 032006 (2023)..
  DOI: 10.35848/1882-0786/acc442

• Y. Hijikata, S. Komori, S. Otojima, Y.-i. Matsushita, T. Ohshima
  Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces
  Appl. Phys. Lett., Vol. 118, a.n. 204005 (2021).
  PDF(2.2MB) DOI: 10.1063/5.0048772

• T. Narahara, S.-i. Sato, K. Kojima, Y. Hijikata, T. Ohshima
  Influences of hydrogen ion irradiation on N_CV_Si^- formation in 4H-Silicon Carbide
  Appl. Phys. Express, Vol. 14, a.n. 021004 (2021).
  DOI: 10.35848/1882-0786/abdc9e

• Y. Yamazaki, Y. Chiba, S.-I. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, S.-Y. Lee, T. Ohshima
  Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations
  Appl. Phys. Lett., Vol. 118, a.n. 021106 (2021).
  DOI: 10.1063/5.0028318

• I. Capan, T. Brodar, Y. Yamazaki, Y. Oki, T. Ohshima, Y. Chiba, Y. Hijikata, L. Snoj, and V. Radulovic'
  Influence of neutron radiation on majority and minority carrier traps in n-type 4H-SiC
  Nucl. Instrum. Methods Phys. Res. B, Vol. 478, pp. 224-228 (2020).
  DOI: 10.1016/j.nimb.2020.07.005

• N. Narahara, S.-i. Sato, K. Kojima, Y. Yamazaki, Y. Hijikata, T. Ohshima
  Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC
  Mater. Sci. Forum, Vol. 1004, pp. 349-354 (2020).
  PDF(0.7MB)

• Y. Chiba, Y. Yamazaki, S.-i. Sato, T. Makino, N. Yamada, T. Satoh, Y. Hijikata, T. Ohshima
  Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment
  Mater. Sci. Forum, Vol. 1004, pp. 337-342 (2020).
  PDF(0.8MB)

• S.-i. Sato, N. Narahara, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima
  Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
  Mater. Sci. Forum, Vol. 1004, pp. 355-360 (2020).
  PDF(1.5MB)

• Y. Yamazaki, Y. Chiba, S.-i. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima
  Optically detected magnetic resonance study of 3D arrayed silicon vacancies in SiC pn diodes
  Mater. Sci. Forum, Vol. 1004, pp. 343-348 (2020).
  PDF(1.7MB)

• A. Takeyama, T. Makino, S. Okubo, Y. Tanaka, T. Yoshie, Y. Hijikata, T. Ohshima
  Radiation response of negative gate biased SiC MOSFETs
  Materials, Vol. 12, a.n. 2741 (2019).
  PDF(1.5MB)

• S.-i. Sato, N. Narahara, Y. Abe, Y. Hijikata, T. Umeda, T. Ohshima
  Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
  J. Appl. Phys., Vol. 126, a.n. 083105 (2019).
  DOI: 10.1063/1.5099327

• Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima
  Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing
  Mater. Sci. Forum, Vol.963, pp. 709-713 (2019).
  PDF(1.8MB)

• Yasuto Hijikata
  Macroscopic simulations of the SiC thermal oxidation process based on the Si and C emission model
  Diamond Relat. Mater., Vol. 92 pp. 253-258 (2019).
  DOI: 10.1016/j.diamond.2019.01.012

• Yu-ichiro Matsushita, Yoritaka Furukawa, Yasuto Hijikata, and Takeshi Ohshima
  First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure
  Appl. Surf. Sci., Vol. 464, pp. 451-454 (2019).
  DOI: 10.1016/j.apsusc.2018.09.072

• Yasuto Hijikata, Takashi Horii, Yoritaka Furukawa, Yu-ichiro Matsushita, and Takeshi Ohshima
  Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals
  J. Phys. Commun., Vol. 2 , a.n. 111003 (2018).
  PDF(1.1MB)

• ((Invited Paper)) Y. Yamazaki, Y. Chiba, T. Makino, S.-i. Sato, N. Yamada, T. Satoh, Y. Hijikata, K. Kojima, S.-Y. Lee, T. Ohshima
  Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing
  J. Mater. Res., Vol. 33, pp.3355-3361(2018).
  DOI: 10.1557/jmr.2018.302

• S.-i. Sato, T. Honda, T. Makino, Y. Hijikata, S.-Y. Lee, and T. Ohshima
  Room temperature electrical control of single photon sources at 4H-SiC surface
  ACS Photonics, Vol. 5, pp. 3159-3165 (2018).
  DOI: 10.1021/acsphotonics.8b00375

• H. Tsunemi, T. Honda, T. Makino, S. Onoda, S.-I. Sato, Y. Hijikata, and T. Ohshima
  Various Single Photon Sources Observed in SiC pin Diodes
  Mater. Sci. Forum, Vol.924, pp. 204-207(2018).
  PDF(1.1MB)

• Ryosuke Asafuji and Yasuto Hijikata
  Generation of stacking faults in 4H-SiC epilayer induced by oxidation
  Mater. Res. Express, vol. 5, a.n. 015903 (2018).
  PDF(3.4MB)

• T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
  Creation and Functionalization of Defects in SiC by Proton Beam Writing
  Mater. Sci. Forum, Vol.897, pp.233-237 (2017).
  PDF(0.5MB)

• Hannes Kraus, Dmitrij Simin, Christian Kasper, Yoshinori Suda, Shunsuke Kawabata, Wataru Kada, Tomoya Honda, Yasuto Hijikata, Takeshi Ohshima, Vladimir Dyakonov, Georgy Astakhov
  Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide
  Nano Lett., vol. 17, pp.2865-2870 (2017).
  DOI: 10.1021/acs.nanolett.6b05395

• Satoshi Mitomo, Takuma Matsuda, Koichi Murata, Takashi Yokoseki, Takahiro Makino, Akinori Takeyama, Shi-nobu Onoda, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, and Yasuto Hijikata
  Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs
  Phys. Status Solidi A, vol. 214, a.n. 1600425 (2017).
  PDF(1.4MB)

• Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Yokoseki, Takahiro Makino, Shi-nobu Onoda, Akinori Takeyama, Takeshi Ohshima, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, and Yasuto Hijikata
  Impacts of Gate Bias and its Variation on Gamma-ray Irradiation Re-sistance of SiC MOSFETs
  Phys. Status Solidi A, vol. 214, a.n. 1600446 (2017).
  PDF(1.5MB)

• Akinori Takeyama, Takuma Matsuda, Takashi Yokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Shinobu Onoda, Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
  Improvement of radiation response of SiC MOSFETs under high temperature and humidity circumstance
  Jpn. J. Appl. Phys., Vol. 55, a.n. 104101 (2016).
  PDF(780kB)

• T. Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata
  Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers
  Superlattices and Microstructures , Vol. 99, pp.197-201 (2016).
  PDF(0.8MB)

• Daisuke Goto and Yasuto Hijikata
  Unified theory of silicon carbide oxidation based on the Si and C emission model
  J. Phys. D: Appl. Phys., Vol.49, a.n. 225103 (2016).
  PDF(1.3MB)

• Yugo Kobayashi, Takashi Yokoseki, Takuma Matsuda, Satoshi Mitomo, Koichi Murata, Michihiro Hachisuka, Yasuyoshi Kaneko, Takahiro Makino, Akinori Takeyama, Shinobu Onoda, Takeshi Ohshima, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata
  Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs
  Mater. Sci. Forum, Vol.858, p.868 (2016).
  PDF(0.3MB)

• Takuma Matsuda, Takashi Yokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Hiroshi Abe, Akinori Takeyama, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
  Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature
  Mater. Sci. Forum, Vol.858, p.860 (2016).
  PDF(0.6MB)

• T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie
  Radiation Response of Silicon Carbide Metal-Oxide-Semiconductor Transistors in High Dose Region
  Jpn. J. Appl. Phys., Vol. 55, a.n.01AD01 (2016).
  PDF(0.6MB)

• Yutaro Miyano, Ryosuke Asafuji, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
  Photoluminescence study of oxidation-induced faults in 4H-SiC epilayers
  AIP Advances, Vol. 5, a.n. 127116 (2015).
  PDF(5MB)

• Tomoya Suzuki, Kazuki Osada, Shuhei Yagi, Shunya Naitoh, Yasushi Shoji, Yasuto Hijikata, Yoshitaka Okada, and Hiroyuki Yaguchi
  Molecular beam epitaxial growth of intermediate-band materials based on GaAs:N delta-doped superlattices
  Jpn. J. Appl. Phys., Vol. 54, a.n. 08KA07 (2015).

• Kazuki Osada, Tomoya Suzuki, Shuhei Yagi, Shunya Naitoh, Yasushi Shoji, Yasuto Hijikata, Yoshitaka Okada, and Hiroyuki Yaguchi
  Control of intermediate-band configuration in GaAs:N delta-doped superlattice
  Jpn. J. Appl. Phys., Vol. 54, a.n. 08KA04 (2015).

• Yasuto Hijikata, Ryosuke Asafuji, Ryotaro Konno, Yurie Akasaka, Ryo Shinoda
  Si and C emission into the oxide layer during the oxidation of silicon carbide and its influence on the oxidation rate
  AIP Advances, Vol. 5, a.n. 067128 (2015).
  PDF(0.8MB)

• R. G. Kim, S. Yagi, Y. Hijikata, and H. Yaguchi
  Growth temperature dependence of the surface segregation of Er atoms in GaAs during molecular beam epitaxy
  Jpn. J. Appl. Phys., Vol. 54, a.n. 051201 (2015).

• D. Goto, Y. Hijikata, S. Yagi, and H. Yaguchi
  Differences in SiC thermal oxidation process between crystalline surface orientations observed by in-situ spectroscopic ellipsometry
  J. Appl. Phys., Vol. 117, a.n. 095306 (2015).
  PDF(1.3MB)

• T. Yokoseki, H. Abe, T. Makino, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata and T. Ohshima
  Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-rays by Thermal Treatments
  Mater. Sci. Forum, Vols. 821-823, pp. 705-708 (2015).
  PDF(0.5MB)

• Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi
  Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
  Mater. Sci. Forum, Vols. 821-823, pp. 327-330 (2015).
  PDF(0.3MB)

• D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi
  Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
  Mater. Sci. Forum, Vols. 821-823, pp. 371-374 (2015).
  PDF(0.9MB)

• Shuhei Yagi, Shunsuke Noguchi, Yasuto Hijikata, Shigeki Kuboya, Kentaro Onabe, Yoshitaka Okada, and Hiroyuki Yaguchi
  "Enhanced optical absorption due to E₊-related band transition in GaAs:N delta-doped superlattices"
  Appl. Phys. Express, Vol. 7, a.n. 102301 (2014).
  

• Wataru Okubo, Shuhei Yagi, Yasuto Hijikata, Kentaro Onabe, and Hiroyuki Yaguchi
  "Photoreflectance study of the temperature dependence of excitonic transitions in dilute GaAsN alloys"
  Phys. Status Solidi A, Vol. 211, pp.752-755 (2014).
  

• Yasuto Hijikata, Yurie Akasaka, Shuhei Yagi, and Hiroyuki Yaguchi
  "Si emission into the oxide layer during oxidation of silicon carbide"
  Mater. Sci. Forum Vols. 778-780, pp. 553-556 (2014).
  PDF(1.2MB)

• K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
  "Biexciton emission from single isoelectronic traps formed by nitrogen-nitrogen pairs in GaAs"
  AIP Conference Prodeedings Vol. 1566, 538-539 (2013). DOI: 10.1063/1.4848523

• S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, and H. Yaguchi
  "Stacked structure of self-organized cubic InN nano-dots grown by molecular beam epitaxy"
  Phys. Status Solidi C, Vol. 10, pp.1545-1548 (2013).
  

• S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, and H. Yaguchi
  "Conversion Efficiency of Intermediate Band Solar Cells with GaAs:N Delta-Doped Superlattices"
  Jpn. J. Appl. Phys., Vol. 52, a.n.102302 (2013).
  

• S. Noguchi, S. Yagi, D. Sato, Y. Hijikata, K. Onabe, S. Kuboya, and H. Yaguchi
  "Analysis of Electronic Structures of Nitrogen Delta-Doped GaAs Superlattices for High Efficiency Intermediate Band Solar Cells"
  IEEE J. PHOTOVOLTAICS, Vol. 3, pp.1287-1291 (2013).
  

• J. Suzuki, M. Orihara, S. Yagi, Y. Hijikata, H. Yaguchi
  "RF-MBE growth of cubic InN nano-scale dots on cubic GaN"
  Journal of Crystal Growth Vol. 378, pp. 454-458 (2013).
  

• R. G. Jin, S. Yagi, Y. Hijikata, S. Kuobya, K. Onabe, R. Katayama, H. Yaguchi
  "Molecular beam epitaxy of ErGaAs alloys on GaAs (001)"
  Journal of Crystal Growth Vol. 378, pp. 85-87 (2013).
  

• Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, and Sadafumi Yoshida
  "Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model"
  Mater. Sci. Forum Vols. 740-742, pp. 833-836 (2013).
  PDF(360kB)

• Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, and Hiroyuki Yaguchi
  "Biexciton Luminescence from Individual Isoelectronic Traps in Nitrogen δ-Doped GaAs"
  Appl. Phys. Express Vol. 5, a.n. 111201 (2012).

• Keiko Kouda, Yasuto Hijikata, Shuhei Yagi, and Hiroyuki Yaguchi
  "Oxygen partial pressure dependence of the SiC oxidation process studied by in-situ spectroscopic ellipsometry"
  J. Appl. Phys. Vol. 112, a.n. 024502 (2012).
  PDF(1MB)

• Hikaru Yamagata, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
  "Micro-Photoluminescence study on the influence of oxidation on stacking faults in 4H-SiC epilayers"
  Appl. Phys. Express Vol. 5, a.n. 051302 (2012).
  PDF(1MB)

• Misao Orihara, Shuhei Yagi, Yasuto Hijikata, and Hiroyuki Yaguchi
  "RF-MBE growth of semipolar InN(10-13) and InGaN(10-13) on GaAs(110)"
  Phys. Status Solidi C Vol. 9, pp. 658-661 (2012).
  

• Kengo Takamiya, Yuta Endo, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama and Hiroyuki Yaguchi
  "Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide"
  Mater. Sci. Forum Vols. 706-7009, pp. 2916-2921 (2012).
  

• Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  "Theoretical studies for Si and C emission into SiC layer during oxidation"
  Mater. Sci. Forum Vols. 679-680, pp. 429-432 (2011).
  PDF(800kB)

• T. Fukushima, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
  "Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)A"
  Physica E Vol. 42, No 10, pp. 2529-2531 (2010).

• Misao Orihara, Shin Takizawa, Takanori Sato, Yuuki Ishida, Sadafumi Yoshida, Yasuto Hijikata, and Hiroyuki Yaguchi
  "RF-MBE growth of InN on 4H-SiC (0001) with off-angles"
  Phys. Satatus Solidi C Vol. 7, pp. 2016-2018 (2010).

• Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Model calculations of SiC oxide growth rate at various oxidation temperatures based on the silicon and carbon emission model"
  Mater. Sci. Forum Vols. 645-648, pp. 809-812 (2010).
  PDF(400kB)

• Keiko Kouda, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures"
  Mater. Sci. Forum Vols. 645-648, pp. 813-809 (2010).
  PDF(400kB)

• Hideki Hashimoto, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Optical and Electrical Characterizations of 4H-SiC-Oxide interfaces by Spectroscopic Ellipsometry and Capacitance-Voltage measurements"
  Appl. Surf. Sci. Vol. 255, pp. 8648-8653 (2009).
  PDF(612kB)

• Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Model Calculation of SiC Oxide Growth Rate based on the Silicon and Carbon Emission Model"
  Mater. Sci. Forum Vols. 615-617, pp. 489-492 (2009).
  PDF(400kB)

• Hideyasu Seki, Takahiro Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Characterization of 4H-SiC-SiO₂ Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer"
  Mater. Sci. Forum Vols. 615-617, pp. 505-508 (2009).
  PDF(400kB)

• Toshiyuki Takaku, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In-situ Spectroscopic Ellipsometry"
  Mater. Sci. Forum Vols. 615-617, pp. 509-512 (2009).
  PDF(400kB)

• Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  "A Kinetic Model of Silicon Carbide Oxidation Based on the Interfacial Silicon and Carbon Emission Phenomenon"
  Appl. Phys. Express vol.2, p.021203 (2009).
  PDF(133kB)

• Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Oxide Growth Rate Enhancement of Silicon Carbide (0001) Si-Faces in Thin Oxide Regime"
  Jpn. J. Appl. Phys. vol.47, pp.7803-7806 (2008).
  PDF(132kB)

• Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In-situ Spectroscopic Ellipsometry"
  Mater. Sci. Forum vols. 600-603, pp.667-670 (2009).
  PDF(3.1MB)

• Yasuto Hijikata, Takeshi Yamamoto, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime"
  Mater. Sci. Forum vols. 600-603, pp.663-666 (2009).
  PDF(400KB)

• S. Kuntharin, S. Sanorpim, H. Yaguchi, Y. Iwahashi, M. Orihara, Y. Hijakata and S. Yoshida
  "High Resolution X- ray Diffraction and Raman Scattering Studies of Cubic-phase InN Films Grown by MBE"
  Advanced Materials Research Vols. 55-57, pp. 773-776(2008).
  

• Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, F. Nakajima, R. Katayama, and K. Onabe
  "Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs"
  Physica E vol. 40, pp.2110-2112 (2008).
  

• G. Shikata, S. Hirano, T. Inoue, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  "Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers"
  Physica Status Solidi (c) Vol. 5, No. 6, pp. 1808-1810 (2008).

• S. Hirano, T. Inoue, G. Shikata, M. Orihara, Y. Hijikata, H. Yaguchi, S. Yoshida, and Y. Hirabayashi
  "Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy"
  Physica Status Solidi (c) Vol. 5, No. 6, pp. 1730-1732 (2008).

• T. Inoue , Y. Iwahashi , S. Oishi, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  "Photoluminescence of cubic InN films on MgO (001) substrates"
  Physica Status Solidi (c) Vol. 5, No. 6, pp. 1579-1581 (2008).

• Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  "Growth Rate Enhancement of (000 -1)-Face Silicon-carbide Oxidation in Thin Oxide Regime"
  Jpn. J. Appl. Phys. Part 2, Vol.46, pp.L770-772 (2007).
  PDF(120KB)

• A. Poggi, F. Moscatelli, Y. Hijikata, S. Solmi and R. Nipoti
  "MOS capacitors obtained by wet oxidation of n-type 4H-SiC pre-implanted with Nitrogen"
  Microelectronic Engineering, Vol. 84, pp.2804-2809 (2007).
  PDF(196KB)

• H. Yaguchi, T. Aoki, T. Morioke, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, D. Aoki, and K. Onabe
  "Photoluminescence study of isoelectronic traps in dilute GaAsN alloys"
  Physica Status Solidi (c) Vol. 4, No. 7, pp. 2760-2763 (2007).

• Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  "Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy"
  Mater. Sci. Forum, Vol.556-557, pp.423-426 (2007).
  PDF(249KB)

• Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Stefano Cristiani and Roberta Nipoti
  "Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation"
  Mater. Sci. Forum, Vol.556-557, pp.651-654 (2007).
  PDF(103KB)

• Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri and Roberta Nipoti
  "Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose"
  Mater. Sci. Forum, Vol.556-557, pp.639-642 (2007).
  PDF(763KB)

• S. Hirano, T. Inoue, G. Shikata, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  "RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates"
  J. Cryst. Growth, Vol.301-302, pp.513-516 (2007).
  PDF(548KB)

• G. Shikata, S. Hirano, T. Inoue, M. Orihara, Y. Hijikata, H. Yaguchi and S. Yoshida
  "RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer"
  J. Cryst. Growth, Vol.301-302, pp.517-520 (2007).
  PDF(276KB)

• K. Tanioka, Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, and K. Onabe
  "Micro Raman study on the improvement of luminescence efficiency of GaAsN alloys"
  J. Cryst. Growth, vol.298, p.131-134 (2007).
  PDF(144KB)

• Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, F. Nakajima, R. Katayama, and K. Onabe
  "Micro-photoluminescence study of nitrogen -doped GaAs grown by metalorganic vapor phase epitaxy"
  J. Cryst. Growth vol.298, p.73-75 (2007).
  PDF(155KB)

• Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  "Simultaneous Determination of Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Infrared Reflectance Spectroscopy"
  Jpn. J. Appl. Phys., vol.45, pp.L1226-L1229 (2006).
  PDF(152KB)

• Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, and T. Hattori
  "Characterization of Oxide Films on 4H-SiC Epitaxial (000-1) Faces by High-Energy-Resolution Photoemission Spectroscopy: Comparison between Wet and Dry Oxidation"
  J. Appl. Phys., vol.100, p.053710 (2006).
  PDF(124KB)

• Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, and T. Hattori
  "Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces"
  Mater. Sci. Forum, vol.527-529, pp.1003-1006 (2006).
  PDF(652KB)

• K. Kakubari, R. Kuboki, Y. Hijikata, H. Yaguchi, and S. Yoshida
  "Real Time Observation of SiC Oxidation using In-Situ Ellipsometer"
  Mater. Sci. Forum, vol.527-529, pp.1031-1034 (2006).
  PDF(264KB)

• Y. Iwahashi, A. Nishimoto, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  "RF-MBE growth of cubic InN films on MgO(001) substrates"
  Phys. Status Solidi C, vol.3, pp.1515-1518 (2006).
  PDF(192KB)

• H. Yaguchi, T. Morioke, T. Aoki, H. Shimizu, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, N. Usami, D. Aoki, and K. Onabe
  "Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys"
  Phys. Status Solidi C, vol.3, pp.1907-1910 (2006).
  PDF(272KB)

• Y. Hijikata, H. Yaguchi, Y. Ishida, M. Yoshikawa, and S. Yoshida
  "Effect of Ar Post-Oxidation Annealing on Oxide-4H-SiC Interfaces Studied by Capacitance to Voltage Measurements and Photoemission Spectroscopy"
  J. Vac. Sci. Technol. A, vol.23(2), pp.298-303 (2005).
  PDF(104KB)

• Y.Hijikata, H.Yaguchi, S.Yoshida, Y.Takata, K.Kobayashi, S.Shin, H.Nohira, and T.Hattori "Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements using Synchrotron Radiation"
  Mater. Sci. Forum, vol.483-485, pp.585-588 (2005).
  PDF(172KB)

• H. Yaguchi, Y. Kitamura, K. Nishida, Y. Iwahashi, Y. Hijikata and S. Yoshida
  "Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy"
  Physica Status Solidi (c), Vol.2, No.7, 2267-2270 (2005).
  PDF(180KB)

• K.Nishida, Y.Kitamura, Y.Hijikata, H.Yaguchi, and S.Yoshida
  "Epitaxial Growth of Hexagonal and Cubic InN Films"
  Physica Status Solidi (b), vol.241, pp.2839-2842 (2004).
  PDF(156KB)

• K. Narita, Y. Hijikata, H. Yaguchi, S.Yoshida, and S. Nakashima
  "Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using infrared reflectance spectroscopy"
  Jpn. J. Appl. Phys., vol.43, pp.5151-5156 (2004).
  PDF(172KB)

• K. Narita, Y. Hijikata, H. Yaguchi, S.Yoshida, J. Senzaki and S. Nakashima
  "Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy"
  Mater. Sci. Forum, vol.457-460, pp.905-908 (2004).
  PDF(208KB)

• Y. Hijikata, H. Yaguchi, Y. Ishida, M. Yoshikawa, T. Kamiya and S.Yoshida
  "Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation "
  Mater. Sci. Forum, vol.457-460, pp.1341-1344 (2004).
  PDF(96KB)

• (in Japanese)中村健太郎、土方泰斗
  ファブリ・ペロ型光ファイバ超音波プローブの受音特性
  電気情報通信学会論文誌C, vol. J86-C, no. 12, pp.1340-1341 (2003).

• H. Yaguchi, T. Morioke, T. Aoki, Y. Hijikata, S. Yoshida, H. Akiyama, N. Usami, D. Aoki, K. Onabe
  "Improvement in the luminescence efficiency of GaAsN alloys by photoexcitation"
  Physica Status Solidi (c) Vol. 0, pp. 2782-2784.
  PDF(172KB)

• H. Kanaya, H. Yaguchi, Y. Hijikata, S. Yoshida, S. Miyoshi, K. Onabe
  "Spectroscopic ellipsometry study on the dielectric functions of GaPN alloys"
  Physica Status Solidi (c) Vol. 0, pp. 2753-2756.
  PDF(404KB)

• 吉川正人、石田夕紀、直本保、土方泰斗、伊藤久義、奥村元、高橋徹夫、土田秀一、吉田貞史
  炭化ケイ素基板上に成長させた1200℃ドライ酸化膜中の界面欠陥の電気特性とその熱アニーリング効果
  電気情報通信学会論文誌C, J86-C (2003), pp.426-433.
  PDF (432K)

• Y. Hijikata, H. Yaguchi, M. Yoshikawa, and S. Yoshida
  "X-ray Photoelectron Spectroscopy Studies of Post Oxidation Process Effects on Oxide/SiC Interfaces,"
  Material Science Forum, vol.389-393, pp.1033-1036 (2002).
  PDF(204KB)

• Y. Ishida, T. Takahashi, H. Okumura, T. Jikimoto, H. Tsuchida, M. Yoshikawa, Y. Tomioka, M. Midorikawa, Y. Hijikata and S. Yoshida
  "The investigations of 4H-SiC/SiO₂ interfaces by optical and electrical measurements,"
  Material Science Forum, vol.389-393, pp.1013-1016 (2002).
  PDF(248KB)

• H. Yaguchi, K. Narita, Y. Hijikata, S. Yoshida, S. Nakashima, and N. Oyanagi
  "Spatial mapping of the carrier concentration and mobility in SiC wafers by micro Fourier-transfrom infrared spectroscopy,"
  Material Science Forum, vol.389-393, pp.621-624 (2002).
  PDF(192KB)

• Y. Tomioka, T. Iida, M. Midorikawa, H. Tukada, K. Yoshimoto, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, R. Kosugi and S. Yoshida
  "Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry,"
  Material Science Forum, vol.389-393, pp.1029-1032 (2002).
  PDF(244KB)

• T. Iida, Y. Tomioka, K. Yoshimoto, M. Midorikawa, H. Tukada, Y. Hijikata, M. Orihara, H. Yaguchi, M. Yoshikawa, Y. Ishida, and S. Yoshida
  "Measurement of the depth profile of the refractive indices in the oxide films on SiC by spectroscopic ellipsometry,"
  Jpn. J. Appl. Phys., vol.41, no.2A, pp.800-804 (2002).
  PDF (153K)

• S. Yoshida, T. Iida, Y. Tomioka, Y. Hijikata, M. Orihara, and H. Yaguchi
  "Depth Profiling of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry"
  Thin Films, pp.153-156 (2001).

• H. Yaguchi, S. Matsumoto, Y. Hijikata, S. Yoshida, T. Maeda, M. Ogura, D. Aoki and K. Onabe
  "Spectroscopic Ellipsometry Study on the Electronic Structure near the Absorption Edge of GaAsN Alloys"
  Phys. Stat. Sol. (b) Vol. 228, pp. 269-272 (2001).
  PDF (98K)

• H. Yaguchi, S. Kikuchi, Y. Hijikata, S. Yoshida, D. Aoki and K. Onabe
  "Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys"
  Phys. Stat. Sol. (b) Vol. 228, pp. 273-277 (2001).
  PDF (130K)

• Y. Hijikata, H. Yaguchi, M. Yoshikawa and S. Yoshida
  "Composition Analysis of SiO₂/SiC Interfaces by Electron Spectroscopic Measurements using Slope Shaped Oxide Films,"
  Appl. Surf. Sci., vol. 184, pp. 161-166 (2001).
  PDF (236K)

• T. Iida, Y. Tomioka, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, H. Okumura and S. Yoshida "Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry,"
  Jpn.J.Appl.Phys., vol.39, pp.L1054-L1056 (2000).
  PDF(195KB)

• Y. Hijikata and K. Nakamura
  "Wavelength-Division-Multiplexing in Fiber Optic Micro-Probe Array for Ultrasonic Field Measurements",
  IEICE Trans. Electron., vol. E83-C, no. 3, pp. 293-297, 2000.
  PDF(221KB)

• Y. Uno and K. Nakamura
  "Pressure sensitivity of a Fiber Optic Micro-probe for the high-frequency ultrasonic field",
  Jpn. J. Appl. Phys., vol. 38, no. 5B, pp. 3120-3123, 1999.
  PDF(1.2MB)

• Y. Uno and K. Nakamura
  "Fabrication and performance of a Fiber Optic Micro-Probe for Megahertz Ultrasonic Field Measurements",
  T. IEE Japan, vol. 118-E, No. 11, pp. 487-492, 1998.
  PDF(176KB)

• K. Nakamura, Y. Uno and K. Iga
  "Sound field measurements by a sharply bent optical fiber",
  J. Acoust. Soc. Jpn., (E)17, pp.45-47, Jan. 1996.

Conferences

• ((Invited)) Y. Hijikata
  A SiC Single-Photon Emitting Device Embedded with the MOS Interface Color Centers
  The 5th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2024 (Shenzhen, China) 2024.11.7.

• R. Oyama and Y. Hijikata
  Polarization control of SiO₂/SiC interfacial single-photon sources by oxygen pressure during thermal oxidation
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2024 (Raleigh, USA) 2-P-41, 2024.10.2.

• ((Invited)) Y. Hijikata
  Density and polarization controls of the single photon sources formed at the MOS interface
  The 4th Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2023 (Beijing, China) 2023.11.10.

• ((Invited)) Y. Hijikata
  Characteristics of the single photon sources formed at the MOS interface
  The 3rd Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2022 (Xuzhou, China) 2022.11.2-4 (Invited for presentation).

• T. Suzuki, Y. Yamazaki, T. Taniguchi, K. Watanabe, Y.-I. Matsushita, Y. Nishiya, Y. Masuyama, Y. Hijikata, T Ohshima
  Generation of boron vacancy defects in hexagonal boron nitride by high temperature ion irradiation
  32nd International Conference on Diamond and Carbon Materials (ICDCM2022), (Lisbon, Portugal) O09B.1, 2022.9.6.

• S. Motoki, S.-I. Sato, Y. Masuyama, Y. Yamazaki, S. Saiki, Y. Hijikata, T. Ohshima
  Magnetic Sensitivity of Silicon Vacancies in 4H-SiC at Different Temperatures
  Defects in solids for quantum technologies (DSQT) (Stockholm, Sweden), 2022.6.16.

• S. Motoki, S.-I. Sato, Y. Masuyama, Y. Yamazaki, S. Saiki, Y. Hijikata, T. Ohshima
  Optically detected magnetic resonance of silicon vacancies in 4H-SiC with different temperatures
  4th International Forum on Quantum Metrology and Sensing (IFQMS) (Online) SE-03A-alpha2-05, 2021.12.8.
• T. suzuki, Y. Yamazaki, T. Taniguchi, K. Watanabe, Y.-I. Matsushita, Y. Masuyama, Y. Hijikata, T Ohshima
  Thermal effects on generation of spin defects in hexagonal boron nitride
  4th International Forum on Quantum Metrology and Sensing (IFQMS) (Online) SE-03A-beta1-07, 2021.12.8.

• K. Sugimoto, Y. Hijikata, M. Shimizu
  Constructing a thermoelectric measurement system by using nitrogen−vacancy center in nanodiamonds
  14th International Conference on New Diamond and Nano Cabons (NDNC) 2020/2021 (Online) 8A-20, 2021.6.8.

• Y. Hijikata, Y.-i. Matsushita, and T. Ohshima
  Structural Identification of the Single-Photon Sources Formed on SiC Surface using Isotope Oxygen
  4th QST international symposium (Online) 1-10, 2020.11.4.

• ((The best poster presentation award))S.-i. Sato, T. Narahara, T. Higuchi, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima
  NCVSi- Centers in Silicon Carbide and Their Photoluminescence Properties
  The 2nd International Forum on Quantum Metrology and Sensing (IFQMS), Q-Leap, 2019.12.17.

• T. Narahara, S.-i. Sato, K. Kojima, Y. Yamazaki, Y. Hijikata, T. Ohshima
  Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 (Kyoto) Tu-P-12, 2019.10.1.
• Y. Chiba, Y. Yamazaki, S.-i. Sato, T. Makino, N. Yamada, T. Satoh, Y. Hijikata, T. Ohshima
  Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 (Kyoto) Tu-3B-07, 2019.10.1.
• S.-i. Sato, T. Narahara, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima
  Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 (Kyoto) Mo-P-13, 2019.9.30.
• Y. Yamazaki, Y. Chiba, S.-i. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima
  Optically detected magnetic resonance study of 3D arrayed silicon vacancies in SiC pn diodes
  International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 (Kyoto) Mo-3B-04, 2019.9.30.

• Y. Yamazaki, Y. Chiba, S.-i. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima
  Optical properties of simultaneous optically and electrically excited silicon vacancies in SiC pn diodes
  QST IRI Workshop, QST, 2019.9.4.

• T. Ohshima, S.-i. Sato, T. Narahara, Y. Yamazaki, Y. Abe, T. Umeda, Y. Hijikata
  Creation of nitrogen-vacancy centers in SiC by ion irradiation
  30th International Conference on Defects in Smiconductors (ICDS-30) (Seattle, WA, USA) 2019.7.22.

• ((Invited))Y. Hijikata, Y.-i. Matsushita, and T. Ohshima
  Room temperature electronic-controllable quantum devices using single-photon sources in SiC crystals
  2nd The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2019 (Beijing, China) 2019.7.18.

• ((Invited))Y. Hijikata, Y.-i. Matsushita, and T. Ohshima
  Structure identification and characterization of the single-photon sources formed on the surface of silicon carbide crystal
  2019 Energy Materials and Nanotechnology on Epitaxy (EMN Meeting on Epitaxy 2019) (Amsterdam, Netherland) A40, 2019.6.20.

• ((Invited))T. Ohshima, Y. Yamazaki, Y. Chiba, Y. Hijikata, K. Kojima, S.-Y. Lee, W. Kada
  Position-Selective Silicon Vacancy Formation in Silicon Carbide Devices using Proton Beam Writing
  Quantum 2019（Torino, Italy) 2019.5.28.

• ((Plenary talk))Yasuto Hijikata
  Room temperature electronic-driven quantum devices using single defects in silicon carbide semiconductors
  2019 International Seminar on Electron Devices Design and Production (SED-2019) (Prague, Czech) 2018.4.23.

• ((Keynote talk))Yasuto Hijikata
  Growth Rate Simulations of Oxide Films on Silicon Carbide based on the Si and C Emission Model
  2018 Conference on Intelligent Computing, Communication & Applied Technologies (CICCAT2018) (Zhuhai, China) 2018.12.25.
• ((Student award))Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, T. Ohshima, Y. Hijikata
  Creating single photon sources in SiC pn diodes using proton beam writing
  2018 Conference on Intelligent Computing, Communication & Applied Technologies (CICCAT2018) (Zhuhai, China) 2018.12.25.

• Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima
  Creation of electrically controllable radiation centers in SiC using proton beam writing
  Europe. Conf. SiC and Related Materials (ECSCRM2018) (WE.01b.05) (Birmingham, UK) 2018.9.5.

• T. Makino, S. Takano, S. Harada, Y. Hijikata, and T. Ohshima
  Gate Structure Dependence of Charge Collection and Single Event Burnout Tolerance for SiC MOSFETs
  2018 IEEE Nuclear and Space Radiation Effects Conference (NSREC) (Hawaii, USA) (PG2) 2018.7.18.

• ((Invited))Yasuto Hijikata
  A Macroscopic Simulation of the SiC Thermal Oxidation Process based on the Si and C Emission Model
  The Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM) 2018 (Beijing, China) 2018.7.11.

• Y. Hijikata, Y. Furukawa, Y.-i. Matsushita, and T. Ohshima
  Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer
  European Materials Research Society (E-MRS) 2018 Spring Meeting (Strasbourg, France) (I.8.3) 2018.6.20.

• ((Invited))T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S.-i. Sato, S. Onoda, Y. Hijikata
  Functionalization of Silicon Carbide by Particle Irradiation toward Quantum Devices
  2017 MRS Fall meeting (Boston, USA) (EM04.05.07) 2017.12.6.

• Y. Hijikata, S. Akahori, and T. Ohshima
  Enhanced Single Photon Emission near Stacking Fault in 4H-SiC Epilayer
  Inter. Conf. SiC and Related Materials (ICSCRM2017) (TH.B1.2) (Washington D.C.) 2017.9.21.
• H. Tsunemi, T. Honda, T. Makino, S. Onoda, S-I. Sato, Y. Hijikata, and T. Ohshima
  Various single photon sources observed in SiC pin diodes
  Inter. Conf. SiC and Related Materials (ICSCRM2017) (TU.BP.10) (Washington D.C.) 2017.9.19.
• H. Kraus, D. Simin, C. Kasper, W. Kada, Y. Hijikata, C. J. Cochrane, T. Ohshima, V. Dyakonov, G. Astakhov
  Contraolled 3D Placement of Vacancy Spins for Quantum Applications in Silicon Carbide
  Inter. Conf. SiC and Related Materials (ICSCRM2017) (FR.B1.4) (Washington D.C.) 2017.9.23.

• ((Invited))T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
  Creation of Single Photon Sources in Wide Bandgap Semiconductors by Ion Irradiation
  26th Annual Meeting of MRS-J (D3-I20-001) (Yokohama) 2016.12.20.
• T. Makino, S. Takano, S. Harada, K. Kojima, Y. Hijikata, and T. Ohshima
  Heavy Ion Induced Charge Collection in SiC MOSFETs
  26th Annual Meeting of MRS-J (D3-P21-010) (Yokohama) 2016.12.21.

• ((Invited))T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
  Creation of single photon emitters in silicon carbide using particle beam irradiation
  20th International Conference on Ion Beam Modification of Materials (IBMM2016) (Wellington, New Zealand) 2016.11.1.

• ((Invited))T. Ohshima, T. Honda, S. Onoda, T. Makino, Y. Hijikata, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. Astakhov
  Creation and Functionalization of Defects in SiC by Irradiation and Thermal Treatment
  11th European Conference on SiC and Related Materials (ECSCRM2016) (We3b-1) (Halkidiki, Greece) 2016.9.28.

• ((Invited))Ryosuke Asafuji and Yasuto Hijikata
  Generation of stacking faults in 4H-SiC epilayer during oxidation
  Energy Materials Nanotechnology (EMN) on Epitaxy 2016 (A05) (Budapest, Hungary) 2016.9.5.

• Koichi Murata, Satoshi Mitomo, Takuma Matsuda, Takashi Tokoseki, Takahiro Makino, Akinori Takeyama, Shinobu Onoda,Shuichi Okubo, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Takeshi Ohshima , Yasuto Hijikata
  Impacts of Gate Bias and its Variation on Gamma-ray Irradiation Resistance of SiC MOSFETs
  European Materials Research Society (E-MRS) 2016 Spring Meeting (L.P.I.8) (Lille, France) 2016.5.4.

• S. Mitomo, T. Matsuda, K. Murata, T. Tokoseki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata
  Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs
  European Materials Research Society (E-MRS) 2016 Spring Meeting (L.P.I.9) (Lille, France) 2016.5.4.

• T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie
  Development of Super Radiation Resistant Metal-Oxide-Semiconductor Transistor Based on Silicon Carbide
  International Workshop on Radiation Resistant Sensors and Related Technologies for Nuclear Power Plant Decommissioning 2016 (R2SRT2016) (Iwaki) 2016.4.20.

• Y. Hijikata, S. Mitomo, T. Matsuda, K. Murata, T. Yokoseki, T. Makino, A. Takeyama, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, and T. Ohshima
  A Development of Super Radiation-Hardened Power Electronics Using Silicon Carbide Semiconductors
  -Toward MGy-Class Radiation Resistivity-
  The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA), (12-4C) (Kiryu) 2015.11.12.
• A. Takeyama, T. Matsuda, T. Yokoseki, S. Mitomo, K. Murata, T. Makino, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata, and T. Ohshima
  Effect of Humidity and temperature on the Radiation Response of SiC MOSFETs
  The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA), (P6-11) (Kiryu) 2015.11.12.
• K. Murata, S. Mitomo, T. Matsuda, T. Yokoseki, T. Makino, H. Abe, S. Onoda, T. Ohshima, A. Takeyama, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, and Y. Hijikata
  Effect of Gate Bias on Radiation Response of SiC MOSFETs
  The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA), (P6-12) (Kiryu) 2015.11.12.
• S. Mitomo, T. Matsuda, K. Murata, T. Yokoseki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, and Y. Hijikata
  Difference by the Oxide Fabrication Process of the Gamma-ray Irradiation Effect on SiC-MOSFETs
  The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA), (P6-14) (Kiryu) 2015.11.12.
• T. Yokoseki, T. Matsuda, S. Mitomo, K. Murata, T. Makino, H. Abe, A. Takeyama, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata, T. Ohshima
  Effect of Gamma-ray Irradiation at High Temperature on the Characteristics of SiC MOSFETs
  The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA), (P6-15) (Kiryu) 2015.11.12.
• T.Matsuda, T.Yokoseki, S. Mitomo, K. Murata, T. Makino, A. Takeyama, S. Onoda, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, T. Ohshima, and Y. Hijikata
  Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Capacitors Irradiated with Gamma-rays at Elevated Temperature
  The 11th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (11th RASEDA), (P6-16) (Kiryu) 2015.11.12.

• Yugo Kobayashi, Takashi Yokoseki, Takuma Matsuda, Satoshi Mitomo, Koichi Murata, Michihiro Hachisuka, Yasuyoshi Kaneko, Takahiro Makino, Akinori Takeyama, Shinobu Onoda, Takeshi Ohshima, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata
  Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs
  Inter. Conf. SiC and Relat. Mater. (ICSCRM2015) (Tu-P-50) (Giargini Naxos, Italy) 2015.10.6.

• Takuma Matsuda, Takashi Tokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Hiroshi Abe, Akinori Takeyama, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Ohshima
  Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature
  Inter. Conf. SiC and Relat. Mater. (ICSCRM2015) (We-P-45) (Giargini Naxos, Italy) 2015.10.7.

• T.Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata
  Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers
  The 16th conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP-XVI 2015) (OTU15) (Suzhou, China) 2015.9.8.

• ((Invited))T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, and T. Yoshie
  Radiation Response of Silicon Carbide Metal-Oxide-Semiconductor Transistors in High Dose Region
  ISPlasma2015 (B3-I-02) (Nagoya) 2015.3.27.

• T. Suzuki, K. Osada, S. Yagi, S. Naito, Y. Hijikata, Y. Okada, and H. Yaguchi
  Molecular Beam Epitaxy Growth of Intermediate Band Materials Based on GaAs:N δ-Doped Superlattices
  6th World Conference on Photovoltaic Energy Conversion (1TuO.7.4) (Kyoto) 2014.11.25.

• K. Osada, T, Suzuki, S. Yagi, S. Naito, Y. Shoji, Y. Okada, Y. Hijikata, and H. Yaguchi
  Control of Intermediate Band Configuration in GaAs:N δ-doped Superlattice
  6th World Conference on Photovoltaic Energy Conversion (1WePo.1.9) (Kyoto) 2014.11.26.

• T. Yokoseki, H. Abe, T. Makino, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata and T. Ohshima
  Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-rays by Thermal Treatments
  10th Europian Concerence on Silicon Carbide and Related Materilas (Mo-P-LN-10) (Grenoble, France) 2014.9.22.

• Y. Miyano, S. Yagi, Y. Hijikata, H. Yaguchi
  Photoluminescence Study of Oxidation-Induced Stacking Faults in 4H-SiC Epilayers
  10th Europian Concerence on Silicon Carbide and Related Materilas (We-P-44) (Grenoble, France) 2014.9.24.

• D. Goto, S. Yagi, Y. Hijikata, H. Yaguchi
  Surface orientation dependence of SiC oxidation process studied by in-situ spectroscopic ellipsometry
  10th Europian Concerence on Silicon Carbide and Related Materilas (We-P-58) (Grenoble, France) 2014.9.24.

• S. Sato, S. Onoda, T. Makino, N. Fujuta, T. Ohshima1, T. Yokoseki, K. Tanaka, Y. Hijikata, Y. Tanaka, M. Kandori, T. Yoshie
  Gamma-Ray Irradiation Response of Silicon Carbide Semiconductor Devices: Extremely High Radiation Resistance
  7th International Youth Nuclear Congress (TS33B-5) (Burgos, Spain) 2014.7.9.

• S. Yagi, J. Suzuki, M. Orihara, Y. Hijikata, H. Yaguchi
  Resonant tunneling of electrons through cubic-InN quantum dots embedded in GaN
  The 41st International Symposium on Compound Semiconductors (P45) (Montpellier, France) 2014.5.12.

• Y. Yamazaki, S. Yagi, Y. Hijikata, K. Onabe, H. Yaguchi
  Anomalous excitation power dependence of the luminescence from GaAsN/GaAs quantum well
  The 41st International Symposium on Compound Semiconductors (P48) (Montpellier, France) 2014.5.12.

• S. Yagi, S. Noguchi, Y. Hijikata, H. Yaguchi, S. Kuboya, K. Onabe, Y. Okada
  Fabrication and Characterization of Intermediate Band Solar Cells Using GaAs:N Delta-Doped Superlattice
  23rd International Photovoltaic Science and Engineering Conference (4-O-7) (Taipei, Taiwan) 2013.10.30.

• S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe, Y. Okada, and H. Yaguchi
  Intermediate band solar cells based on GaAs:N δ-doped superlattices
  4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (I-35) (Lake Arrowhead, USA) 2013.10.3.

• K. Takamiya, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe, and H. Yaguchi
  Excitation power dependence of the emission from various N-N pairs in N δ-doped GaAs
  4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (C-18) (Lake Arrowhead, USA) 2013.10.3.

• Y. Hijikata, Y. Akasaka, S. Yagi, and H. Yaguchi
  Si emission into the oxide layer during oxidation of silicon carbide
  Inter. Conf. SiC and Relat. Matter. (ICSCRM2013) (Th2B-4)(Miyazaki) 2013.10.3.

• W. Okubo, S. Yagi, Y. Hijikata, K. Onabe and H. Yaguchi
  Photoreflectance Study of the Temperature Dependence of Excitonic Transitions in Dilute GaAsN Alloys
  10th International Conference on Nitride Semiconductors 2013 (B10.05) (Washington, DC) 2013. 8. 28.

• S. Yagi, S. Noguchi, Y. Hijikata, S. Kuboya, K. Onabe and H. Yaguchi
  Enhancement of High Energy Band Optical Transition in GaAs:N Delta-Doped Superlattices for Intermediate Band Solar Cells
  International Union of Materials Research Societies - International Conference on Electronic Materials 2012 (A-1-P26-014) (Yokohama) 2012. 9. 26.

• R. G. Jin, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
  Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
  17th International Conference on Molecular Beam Epitaxy (MoP-21) (Nara) 2012. 9. 24.

• J. Suzuki, M. Orihara, S. Yagi, Y. Hijikata and H. Yaguchi
  RF-MBE growth of cubic InN quantum dots on cubic GaN
  17th International Conference on Molecular Beam Epitaxy (MoP-24) (Nara) 2012. 9. 24.

• Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida
  Model calculations of SiC oxide growth rates at sub-atmospheric pressures using the Si and C emission model
  9th Euro. Conf. SiC and Relat. Matter. (ECSCRM2012) (TuP-63)(Saint-Petersburg, Russia) 2012.9.

• K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
  Biexciton Emission from Single Isoelectronic Traps Formed by Nitrogen-Nitrogen Pairs in GaAs
  31st International Conference on the Physics of Semiconductors (69.7) (Zurich, Switzerland) 2012. 8. 2.

• S. Noguchi, S. Yagi, Y. Hijikata, S. Kuboya, K. Onabe, and H. Yaguchi
  Analysis of the Energy Structure of Nitrogen Delta-Doped GaAs Superlattices for High-Efficiency Intermediate-Band Solar Cells
  38th IEEE Photovoltaic Specialists Conference (Austin, USA) 2012. 6. 4

• K. Takamiya, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama and H. Yaguchi
  Biexciton Emission from Single Isoelectronic Traps in Nitrogen Atomic-Layey-Doped GaAs
  3rd International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures (P22)(Traunkirchen, Austria) 2011. 9. 12

• K. Takamiya, Y. Endo, T. Fukushima, S. Yagi, Y. Hijikata, T. Mochizuki, M. Yoshita, H. Akiyama, S. Kuboya, K. Onabe, R. Katayama, and H. Yaguchi
  Single Photon Generation from Nitrogen Atomic-Layer Doped Gallium Arsenide
  7th International Conference on Processing & Manufacturing of Advanced Materials (FILMS 1-11) (Quebec, Canada) 2011. 8. 3

• M. Orihara, S. Yagi, Y. Hijikata, H. Yaguchi
  RF-MBE Growth of Semipolar InN(10-13) and InGaN(10-13) on GaAs(110)
  9th International Conference on Nitride Semiconductors (PD3.19) (Glasgow, UK) 2011. 7. 13

• S. Yagi, Y. Hijikata, Y. Okada, H. Yaguchi
  Quantum Well Double Barrier Resonant Tunneling Structures for Selective Contacts of Hot Carrier Solar Cells
  37th IEEE Photovoltaic Specialists Conference (Seattle, USA) 2011. 6. 23

• Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  "Theoretical studies for Si and C emission into SiC layer during oxidation"
  8th European Conference on Silicon Carbide and Related Materials (ECSCRM), Mo3-6 (Oslo, Norway) 2010.8.30.

• M. Orihara, S. Takizawa, T. Sato, Y. Ishida, S. Yoshida, Y. Hijikata, H. Yaguchi
  "RF-MBE Growth of InN on 4H-SiC(0001) with Off-angles"
  8th International Conference on Nitride Semiconductors (ICNS), ThP13 (Jeju, Korea) 2009. 10. 22.

• Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Model calculation of SiC oxide growth rate at various oxidation temperatures based on the silicon and carbon emission model"
  Int. Conf. SiC Relat. Mater. (ICSCRM), Th-3B-5 (Nurnberg, Germany) 2009.10.15.

• Keiko Kouda, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "In-situ Spectroscopic Ellipsometry Study of SiC Oxidation at Low Oxygen-Partial-Pressures"
  Int. Conf. SiC Relat. Mater. (ICSCRM), Tu-P-40 (Nurnberg, Germany) 2009.10.13.

• T. Fukushima, M. Ito, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Okano, M. Yoshita, H. Akiyama, S. Kuboya, R. Katayama, K. Onabe
  "Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs grown on GaAs(111)"
  The 14th International Conference on Modulated Semiconductor Structures (Tu-mP5) (Kobe) 2009. 7. 21.

• Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Model Calculation of SiC Oxide Growth Rate based on the Silicon and Carbon Emission Model"
  European Conf. SiC Relat. Mater. (ECSCRM), WeP-18 (Barcelona) 2008.9.10.

• Hideyasu Seki, Takahiro Wakabayashi, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Characterization of 4H-SiC-SiO₂ Interfaces by a Deep Ultraviolet Spectroscopic Ellipsometer"
  European Conf. SiC Relat. Mater. (ECSCRM), WeP-19 (Barcelona) 2008.9.10.

• Toshiyuki Takaku, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Observation of SiC Oxidation in Ultra-Thin Oxide Regime by In-Situ Spectroscopic Ellipsometry"
  European Conf. SiC Relat. Mater. (ECSCRM), WeP-20 (Barcelona) 2008.9.10.

• Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In-situ Spectroscopic Ellipsometry"
  Int. Conf. SiC Relat. Mater. (ICSCRM), WeP-64 (Otsu) 2007.10.15.

• Yasuto Hijikata, Takeshi Yamamoto, Hiroyuki Yaguchi and Sadafumi Yoshida
  "Model Calculation of SiC Oxidation Rates in the Thin Oxide Regime"
  Int. Conf. SiC Relat. Mater. (ICSCRM), WeP-63 (Otsu) 2007.10.15.

• T. Inoue, Y.Iwahashi, S. Oishi, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  "Photoluminescence of cubic InN films on MgO(001) substrates"
  7th International Conference on Nitride Semiconductors (ICNS), WP59 (Las Vegas, USA) 2007. 9. 19.

• G. Shikata, S. Hirano, T. Inoue, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  "Improvement of the surface morphology of a-plane InN using low-temperature InN buffer layers"
  7th International Conference on Nitride Semiconductors (ICNS), BB3 (Las Vegas, USA) 2007. 9. 20.

• S. Hirano, T. Inoue, G. Shikata, M. Orihara, Y. Hijikata, H. Yaguchi, S. Yoshida
  "Photoluminescence Study of Hexagonal InN/InGaN Quantum Well Structures Grown on 3C-SiC (001) Substrates by Molecular Beam Epitaxy"
  7th International Conference on Nitride Semiconductors (ICNS), WP60 (Las Vegas, USA) 2007. 9. 19.

• Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, W. Ono, F. Nakajima, R. Katayama, and K. Onabe
  "Twin photoluminescence peaks from single isoelectronic traps in nitrogen delta-doped GaAs"
  13th International Conference on Modulated Semiconductor Structures (MSS), PM11 (Genova, Italy) 2007. 7. 17.

• H. Yaguchi, T. Aoki, T. Morioke, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, D. Aoki, and K. Onabe
  Photoluminescence Study of Isoelectronic Traps in Dilute GaAsN alloys
  International Workshop on Nitride Semiconductors 2006 (IWN2006) MoP2-71, (Kyoto, 2006. 10. 23)

• S. Hirano, T. Inoue, G. Shikata, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates
  Int. Conf. MBE, TuP-23, p.136 (Tokyo, 2006.9.5).

• G. Shikata, S. Hirano, T. Inoue, M. Orihara, Y. Hijikata, H. Yaguchi and S. Yoshida
  RF-MBE growth of a-plane InN on r-plane sapphire with a GaN underlayer
  Int. Conf. MBE, TuP-24, p.137 (Tokyo, 2006.9.5).

• Shingo Oishi, Yasuto Hijikata, Hiroyuki Yaguchi, and Sadafumi Yoshida
  Simultaneous Determination of the Carrier Concentration, Mobility and Thickness of SiC Homo-Epilayers Using Terahertz Reflectance Spectroscopy
  European Conf. SiC Relat. Mater. (ECSCRM), MoP79 p.13 (Newcastle, U.K., 2006.9.4)

• Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Stefano Cristiani and Roberta Nipoti
  Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC Preamorphized by Nitrogen Ion Implantation
  European Conf. SiC Relat. Mater. (ECSCRM), WeP44 p.34 (Newcastle, U.K., 2006.9.6)

• Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri and Roberta Nipoti
  Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
  European Conf. SiC Relat. Mater. (ECSCRM), MoP57 p.11 (Newcastle, U.K., 2006.9.4)

• Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, W. Ono, F. Nakajima, R. Katayama, and K. Onabe
  Micro-photoluminescence study of nitrogen atomic-layer doped GaAs
  25th Electronic Materials Symposium (I4) (Izu-no-kuni) 2006. 7. 6

• K. Tanioka, Y. Endo, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, and K. Onabe
  Micro Raman study on the improvement of luminescence efficiency of GaAsN alloys
  Int. Conf. MOVPE, (Miyazaki, 2006.5).

• Y. Endo, K. Tanioka, Y. Hijikata, H. Yaguchi, S. Yoshida, M. Yoshita, H. Akiyama, F. Nakajima, R. Katayama, and K. Onabe
  Micro-photoluminescence study of nitrogen -doped GaAs grown by metalorganic vapor phase epitaxy
  Int. Conf. MOVPE, (Miyazaki, 2006.5).

• S. Yoshida, K. Kabubari, Y. Hijikata, H. Yaguchi and M. Yoshikawa
  Real-time Observation of SiC Oxidation using an in situ Ellipsometer
  2006 Japanese-Spanish-German Joint Workshop on Advanced Semiconductor Optoelectronic Materials and Devices (Berlin, Germany, 2006.3).

• Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, H. Nohira, and T. Hattori
  "Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces"
  Inter. Conf. SiC Relat. Mater., (Pittsburg, USA, 2005.9).

• K. Kakubari, R. Kuboki, Y. Hijikata, H. Yaguchi, and S. Yoshida
  "Real Time Observation of SiC Oxidation using In-Situ Spectroscopic Ellipsometer"
  Inter. Conf. SiC Relat. Mater., (Pittsburg, USA, 2005.9).

• Y. Iwahashi, A. Nishimoto, M. Orihara, Y. Hijikata, H. Yaguchi, and S. Yoshida
  "RF-MBE growth of cubic InN films on MgO(001) substrates"
  6th Inter. Conf. Nitride Semiconductor, (Bremen, Germany, 2005.8).

• H. Yaguchi, T. Morioke, T. Aoki, H. Shimizu, Y. Hijikata, S. Yoshida, M. Yoshita, H. Akiyama, N. Usami, D. Aoki, and K. Onabe
  Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloys
  6th International Conference on Nitride Semiconductors (Bremen, Germany, 2005. 8).

• S.Yoshida, Y.Kitamura, Y.Iwahashi, H.Tada, M.Orihara, Y.Hijikata, and H.Yaguchi
  "Epitaxial Growth of Hexagonal and Cubic InN Films by Gas Source Molecular Beam Epitaxy"
  7th China-Japan Symposium on Thin Films (China, 2004.9).

• Y.Hijikata, H.Yaguchi, S.Yoshida, Y.Takata, K.Kobayashi, S.Shin, H.Nohira, T.Hattori
  "Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements using Synchrotron Radiation"
  European Conf. SiC Relat. Mater.,WeP1-67 (Bologna, Itary, 2004.9).

• H. Yaguchi, Y. Kitamura, K. Nishida, Y. Iwahashi, Y. Hijikata and S. Yoshida
  "Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy"
  Int. Workshop on Nitride Semiconductors, (Pittsburgh, USA, 2004.7).

• K.Nishida, Y.Kitamura, Y.Hijikata, H.Yaguchi, and S.Yoshida
  "Epitaxial Growth of Hexagonal and Cubic InN Films"
  Int. Sympo. Blue Light LED (ISBLLED), (Gyeongju, Korea, 2004.3).

• S.Yoshida, K.Nishida, Y.Kitamura, M.Orihara, Y.Hijikata, and H.Yaguchi
  "Epitaxial Growth of Hexagonal and Cubic InN Films and Their Properties"
  Japanese-Spanish-German Workshop 2004 on Recent Progress in Advanced Materials, Devices, Processing and Characterization (Ohita, Japan, 2004.3).

• K. Narita, Y. Hijikata, H. Yaguchi, S.Yoshida, J. Senzaki and S. Nakashima
  "Characterization of electrical properties in high-dose implanted and post-implantation-annealed 4H-SiC wafers using infrared reflectance spectroscopy"
  10th Inter. Conf. SiC Relat. Mater., TuP4-9 (Lyon, France, 2003.10).

• Y. Hijikata, H. Yaguchi, Y. Ishida, M. Yoshikawa, T. Kamiya and S.Yoshida
  "Photoemission Spectroscopic Studies on Oxide/SiC Interfaces Formed by Dry and Pyrogenic Oxidation "
  10th Inter. Conf. SiC Relat. Mater., MoP3-10 (Lyon, France, 2003.10).

• H. Yaguchi, T. Morioke, T. Aoki, Y. Hijikata, S. Yoshida, H. Akiyama, N. Usami, D. Aoki, K. Onabe
  Improvement in the luminescence efficiency of GaAsN alloys by photoexcitation
  5th International Conference on Nitride Semiconductors (Nara, Japan, 2003. 5).

• H. Kanaya, H. Yaguchi, Y. Hijikata, S. Yoshida, S. Miyoshi, K. Onabe
  Spectroscopic ellipsometry study on the dielectric functions of GaPN alloys
  5th International Conference on Nitride Semiconductors (Nara, Japan, 2003. 5).

• Y. Hijikata, Satoshi Kawato, S. Sekiguchi, H. Yaguchi, Y. Ishida, M. Yoshikawa, T. Kamiya and S. Yoshida
  "Photoemission Spectroscopy and In-Situ Spectroscopic Ellipsometry Studies on the Ar Post-Oxidation-Annealing Effects of Oxide/SiC Interfaces"
  Proc. Asia-Pacific Workshop on Widegap Semiconductors, (Awaji island, Japan) Mav06, pp.127-132.
  PDF (580K)

• H. Yaguchi, M. Baba, H. Akiyama, D. Aoki, K. Onabe, Y. Hijikata and S. Yoshida
  "Time-Resolved Photoluminescence Study of GaAsN Alloys"
  International Workshop on Nitride Semiconductors (Aachen, Germany) 2002. 7

• H. Yaguchi, Y. Hijikata, S. Yoshida, M. Baba, H. Akiyama, D. Aoki and K. Onabe
  "Time-resolved photoluminescence of GaAsN alloys grown by metalorganic vapor phase epitaxy"
  21st Electronic Materials Symposium (I6) (Izu-Nagaoka) 2002. 6

• S. Yoshida, Y. Tomioka, M. Midorikawa,Y. Hijikata, and H. Yaguchi
  "Characterization of Oxide/SiC Interfaces by Spectroscopic Ellipsometry and XPS"
  Japanese-Spanish-German Workshop 2002 on Recent Progress in Advanced Materials, Devices, Processing and Characterization (Cordoba, Spain) 2002.3

• S. Yoshida, T. Iida, Y. Tomioka, Y. Hijikata, M. Orihara, and H. Yaguchi
  "Depth Profiling of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry"
  6th China-Japan Symposium on Thin Films (Kunming, China) 2001. 11

• Y. Hijikata, H. Yaguchi, M. Yoshikawa, and S. Yoshida
  "x-ray photoelectron spectroscopy studies of post oxidation process effects on oxide/SiC interfaces,"
  Int. Conf. SiC & Rela. Mater. (ICSCRM), WeP-66, p.755, 2001.11.

• Y. Ishida, T. Takahashi, H. Okumura, T. Jikimoto, H. Tsuchida, M. Yoshikawa, Y. Tomioka, M. Midorikawa, Y. Hijikata and S. Yoshida
  "The investigations of 4H-SiC/SiO₂ interfaces by optical and electrical measurements,"
  Int. Conf. SiC & Rela. Mater. (ICSCRM), ThP-66, p.777, 2001.11.

• H. Yaguchi, K. Narita, Y. Hijikata, S. Yoshida, S. Nakashima, and N. Oyanagi
  "Spatial mapping of the carrier concentration and mobility in SiC wafers by micro Fourier-transfrom infrared spectroscopy,"
  Int. Conf. SiC & Rela. Mater. (ICSCRM), WeP-80, p.769, 2001.11.

• Y. Tomioka, T. Iida, M. Midorikawa, H. Tukada, K. Yoshimoto, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, R. Kosugi and S. Yoshida
  "Characterization of the interfaces between SiC and oxide films by spectroscopic ellipsometry,"
  Int. Conf. SiC & Rela. Mater. (ICSCRM), ThB2-6, pp.531-532, 2001.11.

• H. Yaguchi, S. Kikuchi, Y. Hijikata, S. Yoshida, D. Aoki and K. Onabe
  "Photoluminescence Study on Temperature Dependence of Band Gap Energy of GaAsN Alloys"
  The Fourth International Conference on Nitride Semiconductors (ICNS-4) (Denver, USA) 2001. 7.

• H. Yaguchi, S. Matsumoto, Y. Hijikata, S. Yoshida, T. Maeda, M. Ogura, D. Aoki and K. Onabe
  "Spectroscopic Ellipsmemtry Study on the Electronic Structure Near the Absorption Edge of GaAsN Alloys"
  The Fourth International Conference on Nitride Semiconductors (ICNS-4) (Denver, USA) 2001. 7.

• H. Yaguchi, T. Nakamura, Y. Hijikata, S. Yoshida, K. Kojima, X. Shen and H. Okumura
  "Persistent Photoconductivity in Si-Doped n-Type GaN"
  The Fourth International Conference on Nitride Semiconductors (ICNS-4) (Denver, USA) 2001. 7.

• H. Yaguchi, S. Kikuchi, Y. Hijikata, S. Yoshida, D. Aoki and K. Onabe
  "Temperature dependence of photoluminescence of GaAsN alloys,"
  20th Electronic Materials Symposium (C4) (Nara) 2001. 6.

• Y. Hijikata, H. Yaguchi, M. Yoshikawa and S. Yoshida
  "Composition Analysis of SiO₂/SiC Interfaces by Electron Spectroscopic Measurements using Slope Shaped Oxide Films,"
  E-MRS spring meeting, F-II.6, p.F-5, Jury, 2001.

• T. Iida, Y. Tomioka, K. Matsunaka, Y. Hijikata, H. Yaguchi, M. Yoshikawa, Y. Ishida, H. Okumura and S. Yoshida
  "Characterization of Oxide Films on SiC by Spectroscopic Ellipsometer",
  Extended Abstracts of 1st Intern. Workshop on Ultra-Low-Loss Power Device Technology, pp.203-204, May, 2000.

• Y. Uno and K. Nakamura
  "A Fiber Optic Micro-Probe Array with Wavelength-Division- Multiplexing Technique for Ultrasonic Field Measurements",
  IEEE Ultrasonics Sympo., II-2, pp. 1273-1276, Oct. 1998.

• Y. Uno and K. Nakamura
  "Measurements of high-frequency ultrasonic field by a fiber optic micro-probe",
  12th Int. Conf. Optical Fiber Sensors, OTuD6, pp.87-90, Oct. 1997.

• Y. Uno and K. Nakamura
  "Characteristics of a Sharply Bent Optical Fiber for Sound Field Measurements",
  11th Int. Conf. Optical Fiber Sensors, Th5-6, pp.658-661, May 1996.

Books

• Y. Hijikata, Y.-I. Matsushita, and T. Ohshima
  "SiC thermal oxidation process and MOS interface characterizations: From carrier transportation to single-photon source" (Chapter 8) in "Handbook of Silicon Carbide Materials and Devices"
  Ed. Zhe C. Feng, Taylor & Francis, CRC (May 31, 2023).
  www.routledge.com/9780367188269

• Yasuto Hijikata
  Silicon carbide (SiC): An extremely tough semiconducting material
  Science Impact ltd., UK (March, 2020)
  http://impact.pub/Impact2020-digitaledition/ (pp.49-51)

• S. Yoshida, Y. Hijikata, and H. Yaguchi
  Chapter "Investigation of SiC/Oxide Interface Structures by Spectroscopic Ellipsometry" (Chapter 4) in "Advanced Silicon Carbide Devices and Processing", ed. Stephen E. Saddow and Francesco La Via, INTECH open access publisher (September 17, 2015).

• Y. Hijikata, S. Yagi, H. Yaguchi, and S. Yoshida
  Chapter "Thermal Oxidation Mechanism of Silicon Carbide" (Chapter 7) in "Physics and Technology of Silicon Carbide Devices", ed. Yasuto Hijikata, INTECH open access publisher (October 16, 2012).

• S. Yoshida, Y. Hijikata, and H. Yaguchi
  Chapter "Nondestructive and Contactless Characterization Method for Spatial Mapping of the Thickness and Electrical Properties in Homo-Epitaxially Grown SiC Epilayers Using Infrared Reflectance Spectroscopy" (Chapter 1) in "Physics and Technology of Silicon Carbide Devices", ed. Yasuto Hijikata, INTECH open access publisher (October 16, 2012).

• Y. Hijikata, H. Yaguchi, and S. Yoshida
  Chapter "Growth rate enhancement of silicon-carbide oxidation in thin oxide regime" (Chapter 4) in "Properties and Applications of Silicon Carbide", ed. Rosario Gerhardt, INTECH open access publisher (April 4, 2011).

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